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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM6472-4UL FEATURES n HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB VDS= 10V dB A dB % Two-Tone Test Po= 25.5dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 35.5 8.5 -44 TYP. MAX. 36.5 9.5 1.1 36 -47 1.1 1.3 0.6 1.3 80 f = 6.4 to 7.2GHz add IM3 dBc A C Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A UNIT mS V A V C/W MIN. -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 Rth(c-c) Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM6472-4UL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 3.5 25 175 -65 to +175 PACKAGE OUTLINE (2-11D1B) 0.60.15 4-C1.2 4.0 MIN. Unit in mm (1) (1) Gate (2) Source 12.90.2 3.20.3 (2) (2) (3) Drain (3) 170.3 210.2 11.0 MAX. 0.1 -0.05 +0.1 0.2 MAX. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 1.60.3 2.60.3 12 5.0 MAX. 4.0 MIN. TIM6472-4UL RF PERFORMANCE Output Power vs. Frequency 39 38 Po (dBm) 37 36 35 34 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 VDS= 10V IDS 1.1A Pin= 27.0dBm Frequency (GHz) Output Power vs. Input Power 40 39 38 Po 37 Po (dBm ) 36 Aadd 35 34 33 32 31 21 23 25 27 29 31 40 30 20 10 0 A a d d (%) 60 50 f= 6.8GHz VDS= 10V IDS 1.1A 90 80 70 P in ( dB m ) 3 TIM6472-4UL Power Dissipation vs. Case Temperature 30 20 PT (W) 10 0 0 40 80 120 160 200 Tc (*Z ) IM3 vs. Output Power Characteristics - 20 VDS= 10V IDS 1.1A f= 6.8GHz f= 5MHz - 30 IM3 (dBc) - 40 - 50 - 60 21 23 25 27 29 31 Po(dBm), Single Carrier Level 4 |
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